IRF1010E
Key Features
- Static drain-source on-resistance
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device
- reliable device for use in a wide variety of applications
- Part: IRF1010E
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 241.34 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF1010EL | International Rectifier | Power MOSFET |
| IRF1010ES | International Rectifier | Power MOSFET |
| IRF1010EPBF | International Rectifier | Power MOSFET |
| IRF1010ELPbF | International Rectifier | HEXFET Power MOSFET |
| IRF1010N | International Rectifier | Power MOSFET |
| IRF1010NPBF | International Rectifier | Power MOSFET |
| IRF1010NL | International Rectifier | Power MOSFET |
| IRF1018ESLPbF | International Rectifier | Power MOSFET |
| IRF101 | Fairchild Semiconductor | N-Channel Power MOSFET |