Datasheet Details
| Part number | IRF1010NL |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 146.83 KB |
| Description | Power MOSFET |
| Datasheet | IRF1010NL_InternationalRectifier.pdf |
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Overview: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche.
| Part number | IRF1010NL |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 146.83 KB |
| Description | Power MOSFET |
| Datasheet | IRF1010NL_InternationalRectifier.pdf |
|
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l l HEXFET® Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11mΩ G S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
Compare IRF1010NL distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF1010N | N-Channel MOSFET | INCHANGE |
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IRF1010NS | N-Channel MOSFET | INCHANGE |
 |
IRF1010 | N-Channel Power MOSFET | nELL |
|
IRF1010E | N-Channel MOSFET | INCHANGE |
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IRF1010ES | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| IRF1010NLPBF | Power MOSFET |
| IRF1010N | Power MOSFET |
| IRF1010NPBF | Power MOSFET |
| IRF1010NS | Power MOSFET |
| IRF1010NSPBF | Power MOSFET |
| IRF1010E | Power MOSFET |
| IRF1010EL | Power MOSFET |
| IRF1010ELPbF | HEXFET Power MOSFET |
| IRF1010EPBF | Power MOSFET |
| IRF1010ES | Power MOSFET |