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IRF1010NSPBF - Power MOSFET

General Description

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Key Features

  • +  RG VGS.
  • dv/dt controlled by RG.
  • ISD controlled by Duty Factor "D".
  • D. U. T. - Device Under Test + VDD.
  • Reverse Polarity of D. U. T for P-Channel http://www. DataSheet4U. net/ Driver Gate Drive P. W. Period D= P. W. Period [VGS=10V ].
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [.

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📁 Similar Datasheet

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IRF1010NS N-Channel MOSFET INCHANGE
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF1010NS Power MOSFET
IRF1010N Power MOSFET
IRF1010NL Power MOSFET
IRF1010NLPBF Power MOSFET
IRF1010NPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRF1010NSPbF IRF1010NLPbF HEXFET® Power MOSFET D PD - 95103 VDSS = 55V RDS(on) = 11mΩ G S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.