IRF1010ZPbF
Features
IRF1010ZLPb F l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Absolute Maximum Ratings
HEXFET® Power MOSFET
VDSS = 55V
G RDS(on) = 7.5mΩ S ID = 75A
TO-220AB
D2Pak
TO-262
IRF1010ZPb F IRF1010ZSPb F IRF1010ZLPb F
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power...
