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IRF1010ZSPbF - Power MOSFET

Download the IRF1010ZSPbF datasheet PDF. This datasheet also covers the IRF1010ZPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • IRF1010ZLPbF l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF1010ZPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRF1010ZS N-Channel MOSFET INCHANGE
IRF1010 N-Channel Power MOSFET nELL
IRF1010E N-Channel MOSFET INCHANGE
IRF1010ES N-Channel MOSFET INCHANGE
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF1010ZS AUTOMOTIVE MOSFET
IRF1010Z AUTOMOTIVE MOSFET
IRF1010ZL AUTOMOTIVE MOSFET
IRF1010ZLPbF Power MOSFET
IRF1010ZPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95361A IRF1010ZPbF IRF1010ZSPbF Features IRF1010ZLPbF l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 7.