IRF1018ESPbF - Power MOSFET

This page provides the datasheet information for the IRF1018ESPbF, a member of the IRF1018EPbF Power MOSFET family.

Product Overview

International Rectifier

Part number	IRF1018ESPbF
Manufacturer	International Rectifier
File Size	425.89 KB
Description	Power MOSFET
Datasheet	IRF1018ESPbF Datasheet
Additional preview pages of the IRF1018ESPbF datasheet.

long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = T.

Other Datasheets by International Rectifier

Published: Mar 13, 2015 |