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IRF1104 - Power MOSFET

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Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • NO TES: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H 2.92 (.115) 2.64 (.104) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y LOT CO DE 9B1M A IN TE R N A T IO N A L R E C T IF IE R LO GO.

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PD- 9.1724A PRELIMINARY l l l l l l IRF1104 HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 40V G S RDS(on) = 0.009Ω ID = 100A… Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
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