IRF1104S - (IRF1104L/S) HEXFET Power MOSFET

Product Overview

International Rectifier

Part number	IRF1104S
Manufacturer	International Rectifier
File Size	361.78 KB
Description	(IRF1104L/S) HEXFET Power MOSFET
Datasheet	IRF1104S Datasheet
Note	This datasheet PDF includes multiple part numbers: IRF1104S, IRF1104L. Please refer to the document for exact specifications by model.
Additional preview pages of the IRF1104S datasheet.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

D. U. T. - Device Under Test + V DD DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD DataSheet4U. com.
VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

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Published: Jul 27, 2006 |