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IRF1405ZL-7P - AUTOMOTIVE MOSFET

Download the IRF1405ZL-7P datasheet PDF. This datasheet also covers the IRF1405ZS-7P variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF1405ZS-7P-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF1405ZL AUTOMOTIVE MOSFET
IRF1405ZLPbF HEXFET Power MOSFET
IRF1405Z AUTOMOTIVE MOSFET
IRF1405ZPbF HEXFET Power MOSFET
IRF1405ZS AUTOMOTIVE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE MOSFET PD - 96905B IRF1405ZS-7P IRF1405ZL-7P Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 4.