IRF1405ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- 97018A
IRF1405ZPb F IRF1405ZSPb F IRF1405ZLPb F
HEXFET® Power MOSFET
VDSS = 55V
G RDS(on) = 4.9mΩ S ID = 75A
TO-220AB
D2Pak
TO-262
IRF1405ZPb F IRF1405ZSPb F IRF1405ZLPb F
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain...
