IRF1405ZSPbF Datasheet | International Rectifier

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF HEXFET® Power MOSFET VDSS = 55V G RDS(on) = 4.9mΩ S ID =...