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IRF1607 - Power MOSFET

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

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PD -94158 AUTOMOTIVE MOSFET Typical Applications q q q IRF1607 HEXFET® Power MOSFET D 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified VDSS = 75V G S Benefits q q q q q q RDS(on) = 0.0075Ω ID = 142A† Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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