IRF2804S-7PPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRF2804S-7PPb F
HEXFET® Power MOSFET
VDSS = 40V
S (Pin 2, 3 ,5,6,7) G (Pin 1)
RDS(on) = 1.6mΩ ID = 160A
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
VGS EAS EAS (tested) IAR EAR TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) c Pulsed Drain...
