IRF2804SPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
- 95332B
IRF2804Pb F IRF2804SPb F IRF2804LPb F
HEXFET® Power MOSFET
D VDSS = 40V
G RDS(on) = 2.0mΩ
S ID = 75A
TO-220AB IRF2804Pb F
D2Pak
TO-262
IRF2804SPb F IRF2804LPb F
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V...
