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IRF2903ZS - HEXFET Power MOSFET

Download the IRF2903ZS datasheet PDF. This datasheet also covers the IRF2903Z variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 30V RDS(on) = 2.4mΩ G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF2903Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF2903ZSPBF Power MOSFET
IRF2903Z HEXFET Power MOSFET
IRF2903ZL HEXFET Power MOSFET
IRF2903ZLPBF Power MOSFET
IRF2903ZPBF AUTOMOTIVE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96988A AUTOMOTIVE MOSFET IRF2903Z IRF2903ZS IRF2903ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 30V RDS(on) = 2.4mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.