Download the IRF2907LPbF datasheet PDF.
This datasheet also covers the IRF2907ZLPbF variant, as both devices belong to the same (irf2907zxpbf) hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l l l l l l
IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 75V RDS(on) = 4.5mΩ
G S.
Note: The manufacturer provides a single datasheet file (IRF2907ZLPbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRF2907LPbF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRF2907LPbF. For precise diagrams, and layout, please refer to the original PDF.
PD - 95489A AUTOMOTIVE MOSFET Features l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C ...
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er MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 75V RDS(on) = 4.5mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive a
IRF2907LPbF Datasheet
