IRF3805S-7PPbF - Power MOSFET

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free.

International Rectifier

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Datasheet Details

Part number	IRF3805S-7PPbF
Manufacturer	International Rectifier
File Size	347.00 KB
Description	Power MOSFET
Datasheet	IRF3805S-7PPbF Datasheet
Additional preview pages of the IRF3805S-7PPbF datasheet.

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Full PDF Text Transcription

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IRF3805S-7PPbF IRF3805L-7PPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 2.

Published: Oct 18, 2015 |