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IRF3805SPbF - Power MOSFET

Download the IRF3805SPbF datasheet PDF. This datasheet also covers the IRF3805LPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3805LPbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF3805S N-Channel MOSFET INCHANGE
IRF3805 N-Channel MOSFET INCHANGE
IRF3808 N-Channel MOSFET INCHANGE
IRF3808L N-Channel MOSFET INCHANGE
IRF3808S N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF3805S Power MOSFET
IRF3805S-7PPbF Power MOSFET
IRF3805 Power MOSFET
IRF3805L Power MOSFET
IRF3805L-7PPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 97046A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.