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IRF460 - N-Channel Power MOSFET

Datasheet Summary

Description

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.

Features

  • Repetitive Avalanche Ratings.
  • Dynamic dv/dt Rating.
  • Hermetically Sealed.
  • Simple Drive Requirements Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @ TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche.

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE -TO-3 (TO-204AE) Product Summary Part Number BVDSS IRF460 500V RDS(on) ID 0.27 21A PD- 90467B IRF460 500V, N-CHANNEL Description HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.
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