IRF460 - N-Channel Power MOSFET

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.

• Repetitive Avalanche Ratings.
• Dynamic dv/dt Rating.
• Hermetically Sealed.
• Simple Drive Requirements Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @ TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche.