Seme LAB IRF460
N-Channel Power MOSFET
| Part No. | IRF460 |
|---|---|
| Datasheet | IRF460 Download |
| Manufacturer |  Seme LAB |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS PD TJ , TSTG TL Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. 500 21 84 ±20 300 2.4 –55 to 150 300 V A A V W W/°C °C STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain – Source On State Resistance 2 Test Conditions VGS = 0V , ID = 1mA VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±20V , VDS = 0V VDS = VGS , ID = 250µA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 13A VGS = 10V , ID = 21A 2 21 0.27 0.31 Min. 500 Typ. Max. Unit V 25 250 ±100 4 µA nA V A Ω 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.