IRF5802 Description
PD- 94086 SMPS MOSFET Applications l High frequency DC-DC converters IRF5802 HEXFET® Power MOSFET RDS(on) max 1.2Ω@VGS = 10V ID 0.9A VDSS 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. 62.5 Units °C/W Notes through are on page 8 .irf. 1 1/23/01 IRF5802 Static @ TJ = 25°C (unless otherwise specified)...
IRF5802 Key Features
- High frequency DC-DC converters IRF5802 HEXFET® Power MOSFET RDS(on) max 1.2Ω@VGS = 10V ID 0.9A VDSS 150V B
- Low Gate to Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
- Fully Characterized Avalanche Voltage and Current D 1 6 D D 2 5 D G 3 4 S TSOP-6