IRF5801 Description
PD-94044 SMPS MOSFET Applications l High frequency DC-DC converters IRF5801 HEXFET® Power MOSFET VDSS 200V RDS(on) max 2.2Ω ID 0.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. 62.5 Units °C/W Notes through are on page 8 .irf. 1 01/17/01 IRF5801 Static @ TJ = 25°C (unless otherwise specified) Parameter...
IRF5801 Key Features
- High frequency DC-DC converters IRF5801 HEXFET® Power MOSFET VDSS 200V RDS(on) max 2.2Ω ID 0.6A Benefits
- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
- Fully Characterized Avalanche Voltage and Current
- D 1 6 A D D 2 5 D G 3 4 S T op V iew TSOP-6