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PD-94044
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF5801
HEXFET® Power MOSFET
VDSS
200V
RDS(on) max
2.2Ω
ID
0.6A
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
D
1
6
A D
D
2
5
D
G
3
4
S
T op V iew
TSOP-6
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
0.
IRF5801 Datasheet
