Datasheet Details
| Part number | IRF5810 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 208.72 KB |
| Description | Power MOSFET |
| Datasheet | IRF5810_InternationalRectifier.pdf |
|
|
Overview: PD -94198 IRF5810 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -20V RDS(on) max (mΩ) 90@VGS = -4.5V 135@VGS = -2.5V ID -2.9A -2.
| Part number | IRF5810 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 208.72 KB |
| Description | Power MOSFET |
| Datasheet | IRF5810_InternationalRectifier.pdf |
|
|
|
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required.
| Part Number | Description |
|---|---|
| IRF5810PbF | Power MOSFET |
| IRF5800 | Power MOSFET |
| IRF5800PBF | Power MOSFET |
| IRF5801 | Power MOSFET |
| IRF5801PbF | Power MOSFET |
| IRF5801PBF-1 | Power MOSFET |
| IRF5802 | Power MOSFET |
| IRF5802PbF | Power MOSFET |
| IRF5803 | Power MOSFET |
| IRF5803D2 | FETKY MOSFET |