Datasheet Details
| Part number | IRF5810PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 190.51 KB |
| Description | Power MOSFET |
| Datasheet | IRF5810PbF-InternationalRectifier.pdf |
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Overview: l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l.
| Part number | IRF5810PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 190.51 KB |
| Description | Power MOSFET |
| Datasheet | IRF5810PbF-InternationalRectifier.pdf |
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These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required.
| Part Number | Description |
|---|---|
| IRF5810 | Power MOSFET |
| IRF5800 | Power MOSFET |
| IRF5800PBF | Power MOSFET |
| IRF5801 | Power MOSFET |
| IRF5801PbF | Power MOSFET |
| IRF5801PBF-1 | Power MOSFET |
| IRF5802 | Power MOSFET |
| IRF5802PbF | Power MOSFET |
| IRF5803 | Power MOSFET |
| IRF5803D2 | FETKY MOSFET |