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IRF6217 - HEXFET Power MOSFET

Features

  • max. junction temperature.
  • Pulse width ≤ 400µs; duty cycle ≤ 2%.
  • When mounted on 1 inch square copper board. ‚ Starting TJ = 25°C, L = 15mH RG = 25Ω, IAS = -1.4A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription

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PD - 94359 SMPS MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters IRF6217 HEXFET® Power MOSFET RDS(on) max 2.4Ω@VGS =-10V ID -0.7A l VDSS -150V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App.
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