IRF6702M2DTR1PbF
Features l Replaces Two discrete high side MOSFETs l Optimized for High Frequency Switching l Low Profile (<0.7 mm) l Dual Sided Cooling patible l Ultra Low Package Inductance l patible with existing Surface Mount
Techniques l Ro HS pliant and Halogen Free l 100% Rg tested
- 97540
IRF6702M2DTRPb F
IRF6702M2DTR1Pb F
Direct FET Power MOSFET
Typical values (unless otherwise specified)
VDSS
RDS(on)
RDS(on)
30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
9.4n C 3.3n C 1.2n C 17n C 6.3n C 1.8V
G1 S1
G2 S2
Applicable Direct FET Outline and Substrate Outline
Direct FET ISOMETRIC
S1 S2 SB
M2 M4 MA L4 L6 L8
Description
The IRF6702M2DPb F bines two MOSFET switches optimized for high side applications into a single medium can Direct FET package. The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high...
