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IRF6702M2DTR1PbF - Power MOSFET

Download the IRF6702M2DTR1PbF datasheet PDF. This datasheet also covers the IRF6702M2DTRPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The IRF6702M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package.

The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses.

Key Features

  • l Replaces Two discrete high side MOSFETs l Optimized for High Frequency Switching l Low Profile (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6702M2DTRPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6702M2DTRPbF Power MOSFET
IRF6706S2TR1PBF DirectFET Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Applications l Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters Features l Replaces Two discrete high side MOSFETs l Optimized for High Frequency Switching l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Compatible with existing Surface Mount Techniques l RoHS Compliant and Halogen Free l 100% Rg tested PD - 97540 IRF6702M2DTRPbF IRF6702M2DTR1PbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 9.4nC 3.3nC 1.2nC 17nC 6.3nC 1.