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IRF6702M2DTRPbF - Power MOSFET

General Description

The IRF6702M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package.

The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses.

Key Features

  • l Replaces Two discrete high side MOSFETs l Optimized for High Frequency Switching l Low Profile (.

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Full PDF Text Transcription (Reference)

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Applications l Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters Features l Replaces Two discrete high side MOSFETs l Optimized for High Frequency Switching l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Compatible with existing Surface Mount Techniques l RoHS Compliant and Halogen Free l 100% Rg tested PD - 97540 IRF6702M2DTRPbF IRF6702M2DTR1PbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 9.4nC 3.3nC 1.2nC 17nC 6.3nC 1.