Description
The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- D, Drain-to-Source Current (A) ISD, Reverse Drain Current (A)
100
10
1
0.1
T A = 25°C T J = 175°C Single Pulse
VGS = 0V 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-to-Drain Voltage (V) 0.01
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical V GS(th) Gate threshold Voltage (V)
40 35 30
ID, Drain Current (A)
Fig 11. Maximum Safe Operating Area
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125.
IRF6709S2TR1PBF Datasheet
