IRF6709S2TRPbF - Power MOSFET

International Rectifier (now Infineon)

General Description

The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Key Features

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IRF6709S2TRPbF power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRF6709S2TRPbF
Manufacturer	International Rectifier (now Infineon)
File Size	255.32 KB
Description	Power MOSFET
Datasheet	IRF6709S2TRPbF Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
IRF6709S2TR1PBF	Power MOSFET
IRF6709S2TR1PBF	Power MOSFET
IRF6709S2TR1PbF	Power MOSFET
IRF6702M2DTR1PbF	Power MOSFET
IRF6702M2DTRPbF	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested PD - 97328A IRF6709S2TRPbF IRF6709S2TR1PbF DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 5.9mΩ@10V 10.1mΩ@4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 8.1nC 2.8nC 1.1nC 9.3nC 4.6nC 1.