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IRF6709S2TR1PBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97328A IRF6709S2TRPbF IRF6709S2TR1PbF l RoHS pliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling patible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application  l patible with existing Surface Mount Techniques l 100% Rg tested  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified)   VDSS Qg  tot VGS Qgd 2.8nC RDS(on) Qgs2 1.1nC RDS(on) Qoss 4.6nC 25V max ±20V max 5.9mΩ@10V 10.1mΩ@4.5V Qrr 9.3nC Vgs(th) 1.8V 8.

General Description

The IRF6709S2TRPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • D, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 1 0.1 T A = 25°C T J = 175°C Single Pulse VGS = 0V 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-to-Drain Voltage (V) 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical V GS(th) Gate threshold Voltage (V) 40 35 30 ID, Drain Current (A) Fig 11. Maximum Safe Operating Area 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125.

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