IRF6709S2TR1PbF Description
The IRF6709S2TRPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application...
IRF6709S2TR1PbF Key Features
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- Ultra Low Package Inductance
- Optimized for High Frequency Switching
- Ideal for CPU Core DC-DC Converters
- Optimized for Control FET Application
- patible with existing Surface Mount Techniques