Datasheet Details
| Part number | IRF6892STR1PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 249.71 KB |
| Description | Power MOSFET |
| Datasheet | IRF6892STR1PBF IRF6892STRPBF Datasheet (PDF) |
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Overview: IRF6892STRPbF IRF6892STR1PbF l l l l l l l l l PD - 97770 RoHS pliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling patible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Application patible with existing Surface Mount Techniques 100% Rg tested DirectFET®plus MOSFET with Schottky Diode Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.0nC RDS(on) Qgs2 2.3nC RDS(on) Qoss 16nC 25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V Qrr 39nC Vgs(th) 1.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRF6892STR1PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 249.71 KB |
| Description | Power MOSFET |
| Datasheet | IRF6892STR1PBF IRF6892STRPBF Datasheet (PDF) |
|
|
|
The IRF6892SPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.
The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
Application note AN-1035 is followed regarding the manufacturing methods and processes.
| Part Number | Description |
|---|---|
| IRF6892STRPBF | Power MOSFET |
| IRF6893MPbF | MOSFET |
| IRF6893MTRPbF | MOSFET |
| IRF6894MPBF | Power MOSFET |
| IRF6894MTRPBF | Power MOSFET |
| IRF6898MPBF | Power MOSFET |
| IRF6898MTRPBF | Power MOSFET |
| IRF6802SDPBF | Power MOSFET |
| IRF6802SDTRPBF | Power MOSFET |
| IRF6810STR1PBF | Power MOSFET |