Datasheet Details
| Part number | IRF6892STRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 249.71 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6892STRPBF Datasheet
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General Description
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.
Key Features
- °C Single Pulse 0.01 0.01 0.1 1 DC 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 140 120 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 1.0mA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 1000 EAS , Single Pulse Avalanche Energy (mJ) F.