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IRF6894MTRPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: l RoHs pliant Containing No Lead and Bromide  Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±16V max 0.9mΩ@ 10V 1.4mΩ@ 4.5V l Dual Sided Cooling patible  Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Package Inductance 26nC 9.8nC 2.8nC 56nC 31nC 1.6V l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter  l Low Conduction and Switching Losses l patible with existing Surface Mount Techniques  l 100% Rg tested ISOMETRIC MX l Footprint patible to DirectFET™ Applicable DirectFET Outline and Substrate Outline (see p.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The IRF6894MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.

The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.

Application note AN-1035 is followed regarding the manufacturing methods and processes.

Key Features

  • .7 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 160 140 ID, Drain Current (A) Fig 11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 10mA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 1600 EAS , Single Pulse Avalanche Energy (mJ) Fig.

Similar Datasheet

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