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IRF6893MTRPbF - MOSFET

Download the IRF6893MTRPbF datasheet PDF. This datasheet also covers the IRF6893MPbF variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.

Key Features

  • 0 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 1600 1400 1200 1000 Typical VGS(th) Gate threshold Voltage (V) 2.3 2.2 2.1 2.0 1.9 ID = 10mA 1.8 1.7 1.6 1.5 1.4 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 1.5A 2.2A BOTTOM 23A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) www. irf. com Fig 14. Maximum Avalanche Energy vs. D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6893MPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6894MPbF Power MOSFET Infineon
IRF6894MTRPbF Power MOSFET Infineon
IRF6898M Power MOSFET Infineon
IRF6898MPbF Power MOSFET Infineon
IRF6898MTRPbF Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6893MPbF MOSFET
IRF6892STR1PBF Power MOSFET
IRF6892STRPBF Power MOSFET
IRF6894MPBF Power MOSFET
IRF6894MTRPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET®plus MOSFET with Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Low Package Inductance l Optimized for High Frequency Switching  VDSS VGS RDS(on) RDS(on) 25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 25nC 8.5nC 2.5nC 36nC 29nC 1.6V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync.