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IRF6893MPbF Datasheet MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET®plus MOSFET with Schottky Diode ‚ l RoHs pliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling patible  l Low Package Inductance l Optimized for High Frequency Switching  VDSS VGS RDS(on) RDS(on) 25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 25nC 8.5nC 2.5nC 36nC 29nC 1.6V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l patible with existing Surface Mount Techniques  l 100% Rg tested l Footprint patible to DirectFET™ MX ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.

General Description

The IRF6893MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.

The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.

Application note AN-1035 is followed regarding the manufacturing methods and processes.

Key Features

  • 0 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 1600 1400 1200 1000 Typical VGS(th) Gate threshold Voltage (V) 2.3 2.2 2.1 2.0 1.9 ID = 10mA 1.8 1.7 1.6 1.5 1.4 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 1.5A 2.2A BOTTOM 23A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) www. irf. com Fig 14. Maximum Avalanche Energy vs. D.

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