Datasheet Details
| Part number | IRF6893MPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 225.39 KB |
| Description | MOSFET |
| Datasheet |
 IRF6893MPbF Datasheet
|
|
|
General Description
The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.
Key Features
- 0 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 1600 1400 1200 1000 Typical VGS(th) Gate threshold Voltage (V) 2.3 2.2 2.1 2.0 1.9 ID = 10mA 1.8 1.7 1.6 1.5 1.4 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 1.5A 2.2A BOTTOM 23A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) www. irf. com Fig 14. Maximum Avalanche Energy vs. D.