IRF7201 Overview
l l S S S G 1 8 A A D D D D 2 7 VDSS = 30V RDS(on) = 0.030Ω 3 6 4 5 Top View Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and...
IRF7201 Key Features
- N-Channel MOSFET
- Surface Mount
- Available in Tape & Reel
- Dynamic dv/dt Rating