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PD- 91100D
IRF7201
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S S S G
1 8
A A D D D D
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7
VDSS = 30V RDS(on) = 0.030Ω
3
6
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Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF7201 Datasheet
