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PD- 95022
IRF7201PbF
l l l l l l l l
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free
HEXFET®
HEXFET® Power MOSFET
S S S G
1 2 3 4 8 7
A A D D D D
VDSS = 30V RDS(on) = 0.030Ω
6 5
Description
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Fifth Generation power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF7201PBF Datasheet
