Datasheet Details
| Part number | IRF7307QPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 297.30 KB |
| Description | Power MOSFET |
| Datasheet | IRF7307QPBF-InternationalRectifier.pdf |
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Overview: IRF7307QPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l Dual N and P Channel MOSFET N-CHANNEL MOSFET S1 1 8 D1 N-Ch P-Ch l Surface Mount G1 2 7 D1 l Available in Tape & Reel l 150°C.
| Part number | IRF7307QPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 297.30 KB |
| Description | Power MOSFET |
| Datasheet | IRF7307QPBF-InternationalRectifier.pdf |
|
|
|
Top View RDS(on) 0.050Ω 0.090Ω These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional
| Part Number | Description |
|---|---|
| IRF7307 | Power MOSFET |
| IRF7307PbF | Power MOSFET |
| IRF7301 | Power MOSFET |
| IRF7301PBF | HEXFET Power MOSFET |
| IRF7303 | Power MOSFET |
| IRF7303PbF | Power MOSFET |
| IRF7303QPBF | Power MOSFET |
| IRF7304 | Generation V Technology |
| IRF7304PBF | HEXFET Power MOSFET |
| IRF7304QPBF | Power MOSFET |