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IRF7467 - Power MOSFET

Features

  • tarting TJ = 25°C, L = 5.5mH RG = 25Ω, IAS = 9.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription

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PD - 93883B SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l IRF7467 HEXFET® Power MOSFET VDSS 30V RDS(on) max 12mΩ ID 11A High Frequency Buck Converters for Computer Processor Power A A D D D D l Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.
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