IRF7467 Description
30 ± 12 11 9.0 90 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/°C °C Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. 20 50 Units °C/W Notes through are on page 8 .irf. 1 3/25/01 IRF7467 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRF7467 Key Features
- High Frequency DC-DC Isolated Converters with Synchronous Rectification for Tele and Industrial use
- IRF7467 HEXFET® Power MOSFET VDSS 30V RDS(on) max 12mΩ ID 11A High Frequency Buck Converters for puter Pro
- Benefits Ultra-Low Gate Impedance
- Very Low RDS(on) at 4.5V VGS