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IRF7467 - Power MOSFET

Key Features

  • tarting TJ = 25°C, L = 5.5mH RG = 25Ω, IAS = 9.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7467PBF SMPS MOSFET
IRF7460 Power MOSFET
IRF7460PBF HEXFET Power MOSFET
IRF7463 Power MOSFET
IRF7463PBF HEXFET Power MOSFET
IRF7464 Power MOSFET
IRF7464PBF HEXET Power MOSFET
IRF7465 Power MOSFET
IRF7465PBF High frequency DC-DC converters
IRF7466 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 93883B SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l IRF7467 HEXFET® Power MOSFET VDSS 30V RDS(on) max 12mΩ ID 11A High Frequency Buck Converters for Computer Processor Power A A D D D D l Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.