IRF7476 - Power MOSFET

Features

400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

International Rectifier

Datasheet Details

Part number	IRF7476
Manufacturer	International Rectifier
File Size	111.38 KB
Description	Power MOSFET
Datasheet	IRF7476 Datasheet
Additional preview pages of the IRF7476 datasheet.

📁 Similar Datasheet

IRF7473TRPBF - N-Channel MOSFET (INCHANGE)
IRF740 - N-channel MOSFET (STMicroelectronics)
IRF740 - Power MOSFET (Vishay)
IRF740 - N-Channel MOSFET Transistor (Inchange Semiconductor)
IRF7401 - Thermoelectric Cooler Controller (Analog Devices)
IRF7404 - Thermoelectric Cooler Controller (Analog Devices)
IRF740A - Power MOSFET (Vishay)
IRF740A - N-Channel MOSFET (INCHANGE)
IRF740AL - Power MOSFET (Vishay)
IRF740AS - Power MOSFET (Vishay)

Other Datasheets by International Rectifier

IRF7476PBF - Power MOSFET
IRF7470 - Power MOSFET
IRF7470PBF - Power MOSFET
IRF7471 - Power MOSFET
IRF7471PbF - SMPS MOSFET
IRF7473 - Power MOSFET
IRF7473PBF - HEXFET Power MOSFET
IRF7473PBF-1 - Power MOSFET

Full PDF Text Transcription

Click to expand full text

PD - 94311 IRF7476 HEXFET® Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current VDSS 12V RDS(on) max 8.0mΩ@VGS = 4.

Published: Apr 16, 2005 |