IRF7476 Datasheet | Kexin Semiconductor

Features - VDS (V) = 12V - ID = 15 A (VGS = 10V) - RDS(ON) ＜ 8mΩ (VGS = 4.5V) - RDS(ON) ＜ 30mΩ (VGS = 2.8V) SOP-8 +0.04 0.21 -0.02 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDS VGS IDM IAR PD EAS Rth JA Rth JC TJ Tstg Rating 12 ±12 15 12 120 12 2.5 1.6 0.02 160 50 20 150 -55 to 150 Unit V W W/℃ m J ℃/W ℃ .kexin..cn 1 SMD Type MOSFET N-Channel MOSFET IRF7476 (KRF7476) - Typical Characterisitics Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold...