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IRF7476PBF - Power MOSFET

Features

  • petitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 2.3mH R G = 25Ω, IAS = 12A.
  • Pulse width ≤ 400µs; duty cycle ≤ 2%.
  • When mounted on 1 inch square copper board. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD.

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PD - 95279 IRF7476PbF HEXFET® Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. l Lead-Free Benefits l l l VDSS 12V RDS(on) max 8.0mW@VGS = 4.
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