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IRF7484QPBF - Power MOSFET

General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7484Q AUTOMOTIVE MOSFET
IRF7484 HEXFET Power MOSFET
IRF7484PBF Power MOSFET
IRF7480MTRPBF Power MOSFET
IRF7483M Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96167 AUTOMOTIVE MOSFET Typical Applications l Relay replacement l Anti-lock Braking System l Air Bag IRF7484QPbF HEXFET® Power MOSFET VDSS RDS(on) max (mW) ID Benefits l Advanced Process Technology l Ultra Low On-Resistance l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l RoHS Compliant (Halogen Free) Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.