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IRF7509 - Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • A 0 0 2 4 6 F O R T E S T C IR C U IT S E E FIG U R E 9 8 10 12 A -V D S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC ) Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel 1000 Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (.

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Full PDF Text Transcription

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PD - 91270J IRF7509 HEXFET® Power MOSFET q q q q q q q Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8 D1 D1 D2 D2 N-Ch P-Ch 2 7 3 6 VDSS 30V -30V 4 5 P -C HANNE L M O S F E T T op V ie w RDS(on) 0.11Ω 0.20Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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