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IRF7526D1 - FETKY MOSFET

Description

The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications.

Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 26 ) 4.2 4 5.2 8 ( .167 ) ( .2 08 ) N O TE S : 1 DIME N S ION IN G A N D T O L E RA N C IN G P E R A N S I Y 1 4 .5M -1 9 8 2 . 2 CO N T R OL L IN G DIME N S ION : INC H . 3 DIME N S ION S D O N O T INC L U D E M O L D F L A S H . 0.65 6X ( .02 56 ) Part Marking www. irf. com 7 IRF7526D1 Micro8TM Tape & Reel T E R M IN AL N U M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) FE E D D IR E C TIO N N OTES: 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -.

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Full PDF Text Transcription

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PD -91649C IRF7526D1 FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint TM A A S G 1 8 K K D D 2 7 VDSS = -30V RDS(on) = 0.20Ω Schottky Vf = 0.39V 3 6 4 5 Description T op V ie w The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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