IRF7526D1PbF Overview
Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. bining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8TM package, with half the footprint area of the standard...
IRF7526D1PbF Key Features
- Co-packaged HEXFET® Power MOSFET and Schottky Diode
- P-Channel HEXFET
- Low VF Schottky Rectifier
- Generation 5 Technology
- Micro8TM Footprint