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IRF7526D1PbF - MOSFET & Schottky Diode

Description

The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications.

Features

  • rrent di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% VDD ISD.
  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17 For P Channel.

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Full PDF Text Transcription

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PD -95437 IRF7526D1PbF l Co-packaged HEXFET® Power MOSFET and Schottky Diode l P-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technology l Micro8TM Footprint l Lead-Free Description FETKY TM MOSFET & Schottky Diode A1 A2 8K 7K VDSS = -30V S3 6 D RDS(on) = 0.20Ω G4 5D Schottky Vf = 0.39V Top View The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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