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IRF7521D1 - FETKY MOSFET

Description

The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications.

Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • I Y 1 4 .5M -1 9 8 2 . 2 CO N T R OL L IN G DIME N S ION : INC H . 3 DIME N S ION S D O N O T INC L U D E M O L D F L A S H . 0.65 6X ( .02 56 ) Part Marking www. irf. com 7 IRF7521D1 Micro8TM Tape & Reel T E R M IN AL N U M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) FE E D D IR E C TIO N N OTES: 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA - 5 4 1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 14.

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Full PDF Text Transcription

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PD-91646C PRELIMINARY q q q q q IRF7521D1 8 FETKY™ MOSFET / Schottky Diode Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 K K D D VDSS = 20V RDS(on) = 0.135Ω Schottky Vf = 0.39V 2 7 3 6 4 5 Description T op V ie w The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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