Datasheet Details
| Part number | IRF7555PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 118.99 KB |
| Description | Power MOSFET |
| Datasheet | IRF7555PBF-InternationalRectifier.pdf |
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Overview: PD -95993 IRF7555PbF l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.
| Part number | IRF7555PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 118.99 KB |
| Description | Power MOSFET |
| Datasheet | IRF7555PBF-InternationalRectifier.pdf |
|
|
|
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, bined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 Top View VDSS = -20V RDS(on) = 0.055Ω The new Micro8™ package has half the footprint area of the standard SO-8.
| Part Number | Description |
|---|---|
| IRF7555 | Power MOSFET |
| IRF7501 | Power MOSFET |
| IRF7501PBF | Power MOSFET |
| IRF7503 | Power MOSFET |
| IRF7503PBF | Power MOSFET |
| IRF7504 | Power MOSFET |
| IRF7504PBF | Power MOSFET |
| IRF7506 | Power MOSFET |
| IRF7506PBF | HEXFET Power MOSFET |
| IRF7507 | Power MOSFET |