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IRF7606 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 9.1264C IRF7606 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S S S G 1 8 7 A D D D D 2 VDSS = -30V RDS(on) = 0.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline.

Key Features

  • N O TE S : 1 . O U TLIN E CO N FO RM S TO E IA -4 81 & E IA -54 1. 2 . C O NTRO LLING DIM E NS IO N : M IL LIM E TER . 330 .00 (1 2.9 92) MA X . 14.4 0 ( .56 6 ) 12.4 0 ( .48 8 ) NO TE S : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R . 2. O U T LIN E C O N F O R M S T O EIA -48 1 & E IA-5 41. WORLD.

IRF7606 Distributor

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